solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet features: bvceo minimum 400 volts very low saturation voltage very low leakage high gain from 20 ma to 250 ma 200 c operating, gold eutectic die attach superior performance over jedec 2n5010 - 15 series high speed switching tf = 0.4 m s typ sft8600 s.5 1 amp 1000 volts npn transistor maximum ratings symbol value units collector ? emitter voltage (rbe = 1k w ) v ceo v cer 400 1000 v collector ? base voltage v cbo 1000 v emitter ? base voltage v ebo 6 v collector current i c 1 a base current i b 100 m a total device dissipation @ tc = 25 o c derat e above 17 5o c p d 5 .0 2 0 0 w mw/oc operating and storage temperature tj, tstg - 65 to +200 oc thermal resistance, junction to case r ?jc 5 oc/w case outline: smd.5 all dimensions are in inches tolerances: (unless otherwise specified) xx: 0.01? xxx: 0.005? package outline: smd.5 pinout: pin 1: collector pin 2: emitter pin 3: base note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to rele ase. data sheet #: tr0083a doc .145 .115 .304 .288 .408 .392 .304 .288 3x .020 .010 .030 min .128 .112 .233 .217 2x .010 max 2x .10 3 .087 .030 min
solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sft8600s.5 electrical characteristic symbol min ma x units collector ? emitter breakdown voltage (ic= 10madc) (ic= 20 m adc, rbe = 1k w) bv ceo bv cer 400 1000 ?? v collector ? base breakdown voltage (ic= 20 m adc) bv cbo 1000 ?? v emitter ? base breakdown voltage (ie= 20 m adc) bv ebo 6 ?? v collector cutoff cu rrent (vcb= 800v) (vcb= 800v @ tc= 150) i cbo ?? 10 500 adc collector cutoff current (vce= 400 vdc) i ceo ?? 10 m adc emitter cutoff current (veb= 4v) i ebo ?? 1 m adc dc current gain* (ic= 100madc, vce= 5vdc, tc= - 55) (ic= 5madc, vce= 5vdc) (i c= 10madc, vce= 5vdc) (ic= 100madc, vce= 5vdc) (ic= 250madc, vce= 5vdc) h fe 10 30 40 20 15 200 ?? collector ? emitter saturation voltage* (ic= 20madc, ib= 2madc) (ic= 100madc, ib=10madc) v ce(sat) ?? ?? 0.3 0.5 vdc base ? emitter satura tion voltage * (ic= 20madc, ib= 2madc) (ic=100madc, ib=10madc) v be(sat) ?? ?? 0.8 1.0 vdc current gain bandwidth product (ic= 100madc, vce= 10vdc, f= 10mhz) f t 8.0 ?? mhz output capacitance (vcb= 20vdc, ie= 0 adc, f= 1.0mhz) cob ?? 15 pf delay tim e rise time storage time fall time (vcc = 125vdc, ic = 100 madc, ib1 = 20 madc, ib2 = 40 madc) td tr ts tf --- --- 50 150 3 800 nsec nsec m sec nsec * pulse test: pulse width = 300 s, duty cycle = 2% for thermal derating curv es and other characteristic curves please contact ssdi marketing department. note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: tr0083a doc
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